发明名称 Variable gate field-effect transistor and electrical and electronic apparatus including the same
摘要 Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
申请公布号 US8502478(B2) 申请公布日期 2013.08.06
申请号 US201113089244 申请日期 2011.04.18
申请人 KIM HYUN TAK;KIM BONG JUN;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM HYUN TAK;KIM BONG JUN
分类号 H05B37/02;H01L21/8222;H01L35/00 主分类号 H05B37/02
代理机构 代理人
主权项
地址