发明名称 |
Variable gate field-effect transistor and electrical and electronic apparatus including the same |
摘要 |
Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
|
申请公布号 |
US8502478(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113089244 |
申请日期 |
2011.04.18 |
申请人 |
KIM HYUN TAK;KIM BONG JUN;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM HYUN TAK;KIM BONG JUN |
分类号 |
H05B37/02;H01L21/8222;H01L35/00 |
主分类号 |
H05B37/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|