| 摘要 |
<p>A plasma etching apparatus includes a processing container, a depressurization unit, a placement unit, a discharge tube, an introduction waveguide tube, a gas supply unit, a transport tube, a detection window, a coherent light detection unit, and a control unit. The control unit is configured to detect an end point of etching based on an output from the coherent light detection unit. The control unit is configured to use an output from the light receiving devices of a detection region of the coherent light detection unit to extract an output of the light receiving device of a portion of the detection region corresponding to an etching portion to detect the end point of the etching based on an intensity of the coherent light determined from the output of the light receiving device of the portion of the detection region corresponding to the etching portion.</p> |
