| 摘要 |
PURPOSE: A two-beam laser annealing method with improved temperature performance and a system thereof are provided to improve the temperature performance of an annealing process by using two laser beams with different wavelengths. CONSTITUTION: A wafer (10) with a patterned surface (12) and a melting temperature is prepared. A first reflection map and a second reflection map are measured on a part of the patterned surface of the wafer. The first intensity of a first laser beam with a first wavelength and the second intensity of a second laser beam with a second wavelength are defined. The first laser beam of the first intensity and the second laser beam of the second intensity are scanned on the part of the patterned surface of the wafer. The first laser beam and the second laser beam are correspondingly formed on first and second incident planes. |
