发明名称 External cathode ion source
摘要 An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.
申请公布号 US8502161(B2) 申请公布日期 2013.08.06
申请号 US20100776636 申请日期 2010.05.10
申请人 HAHTO SAMI K.;GOLDBERG RICHARD;MCINTYRE EDWARD;HORSKY THOMAS N.;SEMEQUIP, INC. 发明人 HAHTO SAMI K.;GOLDBERG RICHARD;MCINTYRE EDWARD;HORSKY THOMAS N.
分类号 H01J27/08 主分类号 H01J27/08
代理机构 代理人
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