发明名称 |
ELECTRONIC GATE ENHANCEMENT OF SCHOTTKY JUNCTION SOLAR CELLS |
摘要 |
<p>Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.</p> |
申请公布号 |
KR20130086930(A) |
申请公布日期 |
2013.08.05 |
申请号 |
KR20127027287 |
申请日期 |
2011.04.27 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
RINZLER ANDREW GABRIEL;WADHWA POOJA;GUO JING;SEOL, GYUNG SEON |
分类号 |
H01L31/07;H01L31/0224;H01L31/042 |
主分类号 |
H01L31/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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