| 摘要 |
<p>PURPOSE: A method for manufacturing a non-volatile memory device is provided to prevent a decrease in the area of a floating gate, thereby preventing the deterioration of electrical characteristics. CONSTITUTION: A first conductive layer (206) for a floating gate is formed on a semiconductor substrate. A sacrificial layer is formed along the surface of the first conductive layer. The sacrificial layer is changed into a first oxide layer (214a). A first nitride layer and a second oxide layer (218) are formed along the surface of the first oxide layer. A second conductive layer (222b) is formed on the upper part of the second oxide layer.</p> |
