| 摘要 |
PURPOSE: A compound semiconductor and a manufacturing method thereof are provided to suppress a potential by decreasing a difference between a thermal expansion coefficient and a lattice coefficient between layers through a strain control layer between a substrate and a semiconductor layer. CONSTITUTION: A buffer layer (20) with AlN is formed on a substrate (10). A strain control layer (30) including at least one AlGaN is formed on the buffer layer. A semiconductor layer (40) is formed on the strain control layer. The semiconductor layer includes at least one of GaN, InN, and ZnO. The Al rate of the strain control layer near the semiconductor layer is larger than the Al rate of the strain control layer near the buffer layer. [Reference numerals] (10) Substrate; (20) Buffer layer; (30) Strain control layer; (40) Semiconductor layer |
