| 摘要 |
<p>There is provided a silicon carbide single crystal substrate having adhered particles that cause crystal defects removed therefrom and has high surface cleanliness,
the silicon carbide single crystal substrate, wherein a density of first adhered particles attached onto one surface of the substrate and having a height of 100 nm or more is one particle/cm 2 or less, and also a density of second adhered particles attached onto one surface of the substrate and having a height of less than 100 nm is 1,500 particles/cm 2 or less.</p> |
