TRANSISTOR EN COUCHE MINCE,SON PROCEDE DE FABRICATION ET DISPOSITIF D'AFFICHAGE COMPORTANT UN TEL TRANSISTOR.

摘要

Fabricating a thin film transistor (TFT) on a substrate (111) involves forming a gate electrode (112a); forming a semiconductor layer (114) insulated from the gate electrode and partially overlapped with the gate electrode; forming two insulating layers (113a, 113b) between the gate electrode and the semiconductor layer and forming source and drain electrodes at both sides of the semiconductor layer. The first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes sol-compound. Independent claims are included for the following: (1) a display device; and (2) a thin film transistor on the substrate.