| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting device that allows reduction in variation in characteristic distribution in a wafer surface.SOLUTION: A light-emitting device includes: a GaP substrate in which Zn and Si having a concentration lower than the Zn concentration and having a concentration larger than or equal to 1×10cmand lower than or equal to 1.5×10cmare doped; and a stack formed on the GaP substrate, having at least a light-emitting layer, and containing In(GaAl)P (where, 0≤x≤1 and 0≤y≤1). The GaP substrate can transmit emission light from the light-emitting layer. |
