SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To inhibit propagation of cracks to a product region.SOLUTION: A semiconductor device comprises: a substrate in which a product region and a scribe region surrounding the product region are defined; a first insulation film formed on the substrate; a first metal film which surrounds the product region and which is arranged in the scribe region on the first insulation film; a second insulation film formed on the first insulation film and the first metal film; and a first trench formed on an inward side of the first metal film. the first trench surrounds the product region and reaches from a top face of the second insulation film to a position deeper than a top face of the first metal film. The semiconductor device further comprises a second trench formed on an outward side of the first metal film. The second trench surrounds the first metal film and reaches from the top face of the second insulation film to a position deeper than the top face of the first metal film.