发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To improve a performance of a semiconductor device.SOLUTION: In a semiconductor device in which an IC part and a coil antenna connected to the IC part are formed on the same substrate, the coil antenna is formed by conductive layers ANT1, ANT2 which are layers different from each other. Between the conductive layers ANT1, ANT2, an interlayer insulation film is sandwiched. The conductive layers ANT1, ANT2 have overlapping parts OVL at each of which the conductive layers ANT1, ANT2 overlap each other via the interlayer insulation film in a direction perpendicular to a principal surface of a substrate. Each of the conductive layer ANT1 and the conductive layer ANT2 has a width narrower at the overlapping part OVL than at another part.
申请公布号 JP2013149833(A) 申请公布日期 2013.08.01
申请号 JP20120010000 申请日期 2012.01.20
申请人 HITACHI LTD 发明人 WAKANA HIRONORI;UCHIYAMA HIROYUKI;KAWAMURA TETSUSHI;OZAKI HIROAKI;YAMAZOE TAKANORI
分类号 H01L21/822;G06K19/07;G06K19/077;H01L27/04;H01L29/786;H01Q1/38;H01Q1/40 主分类号 H01L21/822
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