发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device capable of improving a yield of the semiconductor device having a first element whose upper surface is salicided and a second element whose upper surface is not salicided.SOLUTION: A method of manufacturing a semiconductor device according to an embodiment includes a block film formation step of forming a block film for blocking salicidation of a second element by a material containing at least carbon, on an upper surface of the second element in first and second elements formed on a semiconductor substrate. |
申请公布号 |
JP2013149685(A) |
申请公布日期 |
2013.08.01 |
申请号 |
JP20120007443 |
申请日期 |
2012.01.17 |
申请人 |
TOSHIBA CORP |
发明人 |
OTA ATSUSHI |
分类号 |
H01L21/28;H01L21/314;H01L21/768;H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H01L27/146 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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