发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device capable of improving a yield of the semiconductor device having a first element whose upper surface is salicided and a second element whose upper surface is not salicided.SOLUTION: A method of manufacturing a semiconductor device according to an embodiment includes a block film formation step of forming a block film for blocking salicidation of a second element by a material containing at least carbon, on an upper surface of the second element in first and second elements formed on a semiconductor substrate.
申请公布号 JP2013149685(A) 申请公布日期 2013.08.01
申请号 JP20120007443 申请日期 2012.01.17
申请人 TOSHIBA CORP 发明人 OTA ATSUSHI
分类号 H01L21/28;H01L21/314;H01L21/768;H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H01L27/146 主分类号 H01L21/28
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