| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing element breakdown by improvement of the withstand voltage at the termination portion.SOLUTION: A semiconductor device includes: a first semiconductor layer of a first conductivity type; a first electrode connected to the first semiconductor layer; a plurality of first second-conductivity-type pillar layers provided in a first direction horizontal to the first electrode; a plurality of second second-conductivity-type pillar layers reaching the inside of the first semiconductor layer from the surface of the first semiconductor layer and being further spaced apart from the first electrode than the first second-conductivity-type pillar layers in a second direction perpendicular to the first direction in a termination portion surrounding an element portion; and a drift layer of the first conductivity type provided between the first electrode and the second second-conductivity-type pillar layers in the first semiconductor layer and having a lower first-conductivity-type impurity concentration than that of the first semiconductor layer. |
