SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a circuit including an inverter for a wiring layer.SOLUTION: A semiconductor device comprises a wiring layer circuit which is formed on an insulation film and which includes at least one inverter element. The inverter includes: a first transistor element; and a resistive element connected to the first transistor element via a connection node. The first transistor element includes: a gate electrode buried in an interlayer insulation film including the insulation film; a gate insulation film formed on the interlayer insulation film and the gate electrode; and a first semiconductor layer formed on the gate insulation film and between a source electrode and a drain electrode. The resistive element includes a second semiconductor layer functioning as resistance. The first semiconductor layer and the second semiconductor layer are formed in the same layer.