发明名称 GAS SUPPLY HEAD AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a gas supply head which sufficiently performs purge of gas diffusion chambers and inhibits unnecessary deposits from occurring in an unintentional area.SOLUTION: A gas supply head includes: gas diffusion chambers 101, each of which is formed by a linear cylindrical space; multiple gas discharge holes 102 which are provided to correspond to the gas diffusion chambers 101 and form a row; first gas supply ports 103 provided at one ends of the gas diffusion chambers 101 and connected with a gas supply system 9 supplying a gas to the gas diffusion chambers 101; gas exhaust ports 104 provided at the other ends of the gas diffusion chambers 101 and connected with a gas exhaust system 10 exhausting the gas from the gas diffusion chambers 101.
申请公布号 JP2013149872(A) 申请公布日期 2013.08.01
申请号 JP20120010525 申请日期 2012.01.20
申请人 TOKYO ELECTRON LTD 发明人 TANAKA SEIJI;SATOYOSHI TSUTOMU
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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