发明名称 |
Mosfet Structures Having Compressively Strained Silicon Channel |
摘要 |
MOSFET structures are provided having a compressively strained silicon channel. A semiconductor device is provided that comprises a field effect transistor (FET) structure having a gate stack on a silicon substrate, wherein the field effect transistor structure comprises a channel formed below the gate stack; and a compressively strained silicon layer on at least a portion of the silicon substrate to compressively strain the channel.
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申请公布号 |
US2013193483(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213359858 |
申请日期 |
2012.01.27 |
申请人 |
BEDELL STEPHEN W.;CHENG KANGGUO;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHENG KANGGUO;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
分类号 |
H01L27/088;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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