发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a first conductor formed over a semiconductor device; an insulation film formed over the semiconductor substrate and the first conductor and having an opening arriving at the first conductor; a first film formed in the opening and formed of a compound containing Zr; a second film formed over the first film in the opening and formed of an oxide containing Mn; and a second conductor buried in the opening and containing Cu.
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申请公布号 |
US2013196503(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313787782 |
申请日期 |
2013.03.06 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OHTSUKA NOBUYUKI;SHIMIZU NORIYOSHI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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