发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first conductor formed over a semiconductor device; an insulation film formed over the semiconductor substrate and the first conductor and having an opening arriving at the first conductor; a first film formed in the opening and formed of a compound containing Zr; a second film formed over the first film in the opening and formed of an oxide containing Mn; and a second conductor buried in the opening and containing Cu.
申请公布号 US2013196503(A1) 申请公布日期 2013.08.01
申请号 US201313787782 申请日期 2013.03.06
申请人 FUJITSU SEMICONDUCTOR LIMITED;FUJITSU SEMICONDUCTOR LIMITED 发明人 OHTSUKA NOBUYUKI;SHIMIZU NORIYOSHI
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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