发明名称 LEVEL SHIFT CIRCUIT
摘要 A level shift circuit includes a first pair of transistors of the first conductive type (M1, M4) with sources coupled to a pair of input nodes (in, inB) and gates coupled to the first power supply (GND) in common; a second pair of transistors of the second conductive type (M2, M5) with drains coupled to the drains of the first pair of the transistors and the gates coupled to the first power supply in common; a third pair of transistors of the second conductive type (M3, M6) with cross-coupled gates and drains coupled to the sources of the second pair of transistors and the sources coupled to the second power supply (V2) in common; and a pair of capacitative elements (C1, C2) with one ends coupled to the pair of input nodes and the other ends coupled to the drains of the third pair of transistors.
申请公布号 US2013196607(A1) 申请公布日期 2013.08.01
申请号 US201313753178 申请日期 2013.01.29
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 MATSUNO NORIAKI;MARUYAMA TATSUHIKO
分类号 H03K17/04 主分类号 H03K17/04
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