发明名称 Semiconductor Arrangement with Active Drift Zone
摘要 A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.
申请公布号 US2013193525(A1) 申请公布日期 2013.08.01
申请号 US201213362038 申请日期 2012.01.31
申请人 WEIS ROLF;DEBOY GERALD;TREU MICHAEL;WILLMEROTH ARMIN;WEBER HANS;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 WEIS ROLF;DEBOY GERALD;TREU MICHAEL;WILLMEROTH ARMIN;WEBER HANS
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
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