发明名称 |
CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes. |
申请公布号 |
US2013193534(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313757701 |
申请日期 |
2013.02.01 |
申请人 |
ROHM CO., LTD.;ROHM CO., LTD. |
发明人 |
NAKATANI GORO |
分类号 |
G01L1/14;H01L21/311 |
主分类号 |
G01L1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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