发明名称 |
ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE |
摘要 |
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
|
申请公布号 |
US2013193424(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313804538 |
申请日期 |
2013.03.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OSAME MITSUAKI;ANZAI AYA;YAMAZAKI YU |
分类号 |
H01L27/28;H01L51/50;G09G3/20;G09G3/30;G09G3/32;G09G5/00;H01L29/786;H01L51/52;H05B33/14;H05B37/00;H05B37/02 |
主分类号 |
H01L27/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|