发明名称 |
Memory Arrays and Methods of Forming Memory Cells |
摘要 |
Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.
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申请公布号 |
US2013193403(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313781457 |
申请日期 |
2013.02.28 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
SMYTHE JOHN;SANDHU GURTEJ S. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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