| 摘要 |
<p>This solid-state image pickup apparatus is provided with: a p-type compound semiconductor layer having a chalcopyrite structure; an electrode formed on the p-type compound semiconductor layer; and an n-type layer, which is separately formed by each pixel, said n-type layer being formed on the p-type compound semiconductor layer surface on the side opposite to the light incoming side of the p-type compound semiconductor layer.</p> |
