| 摘要 |
PROBLEM TO BE SOLVED: To form crystal defect layers having different depth with high positional accuracy without using a mask which shields particle beams or radial rays in a semiconductor device manufacturing method of selectively forming crystal defects for lifetime control on a semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises: performing a surface formation process of forming at least a part of a semiconductor element on one surface of a semiconductor substrate; subsequently, performing a rear face processing process of etching a part on a rear face side opposite to the one surface to form a recess; and subsequently performing an irradiation process. In the irradiation process, the whole area of the rear face is irradiated from the rear face side of the semiconductor substrate without using a mask that shields particle beams or radial rays. By doing this, crystal defect layers which follow a shape of the recess formed in the rear face processing process can be formed. Because formation of the recess follows a semiconductor manufacturing process rule, the recess can be formed with higher accuracy in comparison with a shield mask formed by a machining process and the crystal defect layers formed by the irradiation process can be formed with high positional accuracy. |
