| 摘要 |
PROBLEM TO BE SOLVED: To realize low-current rewrite operation during high-speed operation, and suppress unevenness of each memory cell and read disturbance, in a memory using spin injection magnetization reversal.SOLUTION: Rewriting current is reduced by destabilizing a spin state by giving a weak pulse before rewriting. The disturbance is suppressed by reading in a region where the rewriting current is nonlinearly increased by pulse width. Furthermore, the unevenness is suppressed by a driving method which makes an injection spin amount constant by bit-line electric charge. |
