发明名称 SAPPHIRE SINGLE CRYSTAL AND METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To more precisely suppress the deterioration in the crystallinity of a body part of a sapphire ingot and entrainment of bubbles in the body part when a sapphire single crystal is crystal-grown from a melt of aluminum oxide.SOLUTION: A method for producing a sapphire single crystal includes: a melting process for melting, by heating, an aluminum oxide of a solid filled in a crucible in a heating furnace; a seeding process for bringing the lower end of a seed crystal into contact with the melt of aluminum oxide, that is, an alumina melt; a shoulder formation process including a bubble taking process for forming a shoulder part under the seed crystal and taking bubbles that float on the alumina melt in the shoulder part by pulling upward the seed crystal while stopping or rotating in a state that the lower end of the seed crystal is in contact with the alumina melt; and a body part formation process for forming the body part under the shoulder part by pulling upward the seed crystal while rotating the shoulder part through the seed crystal in a state that the lower end of the shoulder part is in contact with the alumina melt.
申请公布号 JP2013147361(A) 申请公布日期 2013.08.01
申请号 JP20120007094 申请日期 2012.01.17
申请人 SHOWA DENKO KK 发明人 SHONAI TOMOHIRO
分类号 C30B29/20;C30B15/00 主分类号 C30B29/20
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