发明名称 |
PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve performance of photoelectric conversion means.SOLUTION: The photoelectric conversion means comprises a semiconductor element having a laminated structure composed of a conductor, a semiconductor, and an insulator provided between the conductor and the semiconductor. The insulator is a silicon oxide film whose main part is positioned between the conductor and the semiconductor contains nitrogen. The maximum nitrogen concentration of the main part is higher than 0.10 atom%. The interface nitrogen concentration on a semiconductor side surface of the main part is 0.10 atom% or lower. |
申请公布号 |
JP2013149741(A) |
申请公布日期 |
2013.08.01 |
申请号 |
JP20120008200 |
申请日期 |
2012.01.18 |
申请人 |
CANON INC |
发明人 |
HIROTA KATSUNORI |
分类号 |
H01L27/146;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L31/10;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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