发明名称 PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To effectively prevent the occurrence of an undesired resonance phenomenon without inducing the generation of a particle on a high-frequency transmission line around an upper electrode formed to be movable in up and down directions.SOLUTION: A capacitive coupling plasma processing device of cathode-coupling type comprises: a chamber 10; an upper electrode 44 provided in an upper portion of the chamber 10 to be movable in up and down directions; and a susceptor (lower electrode) 14 opposed to the upper electrode, provided that the upper electrode is arranged coaxially and in parallel with the susceptor. The upper electrode 44 has: an electrode main body 46 opposed to the susceptor 14; a conductive backing plate 48 opposed to a ceiling wall (top cover) 10b of the chamber 10; and a ring-like dielectric 52 for joining between a peripheral portion of the electrode main body 46 and a peripheral portion of the backing plate 48 so as to form a gap 50 therebetween. The backing plate 48 of the upper electrode 44 is physically and electrically connected through a bellows 72 to the chamber 10 which is a member at an earth potential.
申请公布号 JP2013149790(A) 申请公布日期 2013.08.01
申请号 JP20120009114 申请日期 2012.01.19
申请人 TOKYO ELECTRON LTD 发明人 IWATA MANABU;YOSHIMURA AKIHIRO;TSUJIMOTO HIROSHI
分类号 H01L21/3065;C23C16/509;H01L21/205;H05H1/46 主分类号 H01L21/3065
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