| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can inhibit electric field concentration to a lower end of a wide opening width part of a trench.SOLUTION: A semiconductor device comprises: a trench 20 which is formed on a surface of a semiconductor substrate 12 and which has a shape in which a first trench part 22 and a second trench part 24 are crossing. The trench 20 includes a crossing part 26 of the first trench part 22 and the second trench part 24, which has a larger opening width in comparison with other parts. An insulator layer 44 is formed inside the crossing part 26, and a gate electrode 40 is not formed inside the crossing part. On the other hand, the gate electrode 40 is formed inside parts other then the crossing part 26. |
