发明名称 |
REFLECTION-TYPE PHOTOMASKS AND METHODS OF FABRICATING THE SAME |
摘要 |
Reflection-type photomasks are provided. The reflection-type photomask includes a substrate and a reflection layer on a front surface of the substrate. The substrate includes a pattern transfer region, a light blocking region and a border region. A trench penetrates the reflection layer in the border region to expose the substrate. First absorption layer patterns are disposed on the reflection layer in the pattern transfer region, and a second absorption layer pattern is disposed on the reflection layer in the light blocking region. Sidewalls of the trench have a sloped profile. Related methods are also provided.
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申请公布号 |
US2013196256(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313754187 |
申请日期 |
2013.01.30 |
申请人 |
SK HYNIX INC.;SK HYNIX INC. |
发明人 |
RYU CHOONG HAN;KIM YONG DAE |
分类号 |
G03F1/24 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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