发明名称 |
STRUCTURE OF ELECTRICAL CONTACT AND FABRICATION METHOD THEREOF |
摘要 |
A method of fabricating an electrical contact comprises the following steps. A substrate having at least a silicon region is provided. At least an insulation layer is formed on the substrate, wherein the insulation layer comprises at least a contact hole which exposes the silicon region. A metal layer is formed on sidewalls and bottom of the contact hole. An annealing process is performed to form a first metal silicide layer in the silicon region nearby the bottom of the contact hole. A conductive layer covering the metal layer and filling up the contact hole is then formed, wherein the first metal silicide layer is transformed into a second metal silicide layer when the conductive layer is formed.
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申请公布号 |
US2013193577(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213364289 |
申请日期 |
2012.02.01 |
申请人 |
TSENG I-MING;TSAI TSUNG-LUNG;CHEN YI-WEI |
发明人 |
TSENG I-MING;TSAI TSUNG-LUNG;CHEN YI-WEI |
分类号 |
H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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