| 摘要 |
PURPOSE: A semiconductor device is provided to improve an ESD protection function by preventing the local current crowding of an NMOS transistor for ESD protection. CONSTITUTION: A trench isolation region (302) for ESD protection is in contact with a drain region. A drain extension formation region (203) is formed by a conductivity type impurity diffusion region same as the drain region. The drain region is formed on the lateral and lower surfaces of a trench isolation region for ESD protection. A drain contact region (204) is electrically connected to the drain region. The drain contact region is formed by the conductivity type impurity diffusion region same as the drain region. |
