| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal of a practicable size and a high-performance group III nitride semiconductor device at low cost without complicating a process so that the condensation of alkali metal in the external of a reaction vessel can be prevented.SOLUTION: In a first reaction vessel 101, using melt mixture 102 that contains alkali metal and at least a group III metal and a nitrogen raw material that is introduced from the external of the first reaction vessel 101, the alkali metal condensing in the external of the first reaction vessel 101 is evaporated again when a group III nitride crystal is grown. |
