| 发明名称 |
SUBSTRATE WITH CHARGED REGION IN INSULATING BURIED LAYER |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor structure which can increase the holding time of 1-T memory at low cost.SOLUTION: A semiconductor structure sequentially comprises a base wafer (1), an insulating layer (2), a top semiconductor layer (3), and an image sensor device. The insulating layer (2) comprises a region with the absolute value of the electric charge density of 10charges/cmor greater. |
| 申请公布号 |
JP2013149991(A) |
申请公布日期 |
2013.08.01 |
| 申请号 |
JP20130041959 |
申请日期 |
2013.03.04 |
| 申请人 |
SOYTEC |
发明人 |
ALLIBERT FREDERIC;GWERUTAZ GODAN;LALLEMENT FABRICE;DIDIER LANDRU;LANDRY KARINE;SHAHEEN MOHAMD;CARLOS MAZUR |
| 分类号 |
H01L21/8242;H01L21/02;H01L21/8246;H01L27/105;H01L27/108;H01L27/12 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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