发明名称 |
SRAM WITH HYBRID FINFET AND PLANAR TRANSISTORS |
摘要 |
An SRAM structure and method which includes a semiconductor on insulator (SOI) substrate which includes a semiconductor substrate, an insulating layer and a semiconductor on insulator (SOI) layer. The SOI layer has a first thickness. The SRAM structure further includes a FinFET transistor formed on the SOI substrate including a first defined portion of the SOI layer of the first thickness forming an active layer of the FinFET transistor and a gate dielectric on the first defined portion of the SOI layer and a planar transistor formed on the SOI substrate including a second defined portion of the SOI layer of a second thickness forming an active layer of the planar transistor and a gate dielectric on the second defined portion of the SOI layer. The first thickness is greater than the second thickness. Also included is a gate electrode on the FinFET transistor and the planar transistor.
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申请公布号 |
US2013193515(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213359454 |
申请日期 |
2012.01.26 |
申请人 |
CHENG KANGGUO;HAENSCH WILFRIED E.-A.;KHAKIFIROOZ ALI;KULKARNI PRANITA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HAENSCH WILFRIED E.-A.;KHAKIFIROOZ ALI;KULKARNI PRANITA |
分类号 |
H01L27/12;H01L21/28 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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