| 摘要 |
The present disclosure relates to a solid-state image pickup apparatus, which is capable of more reliably suppressing generation of color mixture, a method for manufacturing the solid-state image pickup apparatus, and an electronic apparatus. In the present invention, trenches are formed among a plurality of PDs, which receive light and generate charges, such that the trenches are open on the light receiving surface side of a semiconductor substrate having the PDs formed therein, an insulating film is embedded in the trenches, and an insulating film is laminated on the rear surface side of the semiconductor substrate. Then, light blocking sections are formed at areas that correspond to the trenches such that the light blocking sections are laminated on the insulating film, each of said light blocking sections having a protruding shape that protrudes toward the semiconductor substrate. This technology can be applied to, for instance, a rear surface irradiation CMOS-type solid-state image pickup element. |
