BONDED SOI WAFER MANUFACTURING METHOD

摘要

The present invention is a bonded SOI wafer manufacturing method characterized in that an RTO treatment is applied to a peeled bonded SOI wafer which is obtained by means of an ion injection peeing method, an oxide film formed on an SOI layer surface through the RTO treatment is removed, then the SOI layer surface is planarized by applying a thermal planarization treatment that causes silicon atoms in the SOI layer surface to migrate, and a sacrificial oxidation treatment is subsequently applied in order to adjust the film thickness of the SOI layer. Provided as a result is a bonded SOI wafer manufacturing method that enables a high-quality SOI wafer, for which surface roughness of the SOI layer surface is sufficiently reduced, and deep pits on the SOI layer surface are reduced, to be efficiently manufactured.