| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device that reduces power consumption at the time of data writing and also achieves improvement in operation speed, and provide a data writing method of the magnetic memory device.SOLUTION: A magnetic memory device includes multiple memory cells MC that include n [n is a natural number of two or above] serially-connected MTJ elements with different writing current values and resistance values and store 2value data, and comprises: a first current driver 351 that executes writing in a first MTJ element with a first writing current value, in the MTJ elements; a second current driver 352 that executes writing in a second MTJ element with a second writing current value smaller than the first writing current value, in the MTJ elements; and control circuits 34 and 35 that execute control so as to use the second current driver to write data in the second MTJ element after using the first current driver to write data in the first MTJ element, in the memory cells corresponding to multiple addresses. |
