| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method capable of removing reaction products without etching patterns of a photoresist and a formed thin film, and of improving a product yield.SOLUTION: In a processing method, a semiconductor substrate SUB having a major surface is prepared. Thin films II and PS are formed on the major surface of the semiconductor substrate SUB. A photoresist film PHR having a pattern is formed on the thin films II and PS. At least a part of the thin film PS is patterned by using a gas containing a halogen element and using the photoresist film PHR as a mask. A surface of the semiconductor substrate SUB on which the thin film PS is formed is terminated by a fluorine atom using a solution containing a fluoride ion with a high etching selection ratio to both the thin films II and PS and the photoresist film PHR. The semiconductor substrate SUB terminated by the fluorine atom is cleaned by pure water. |
