发明名称 |
TRENCH CAPACITOR WITH SPACER-LESS FABRICATION PROCESS |
摘要 |
A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.
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申请公布号 |
US2013193563(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313800488 |
申请日期 |
2013.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PEI CHENGWEN;LI XI;WANG GENG |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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