发明名称 TRENCH CAPACITOR WITH SPACER-LESS FABRICATION PROCESS
摘要 A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.
申请公布号 US2013193563(A1) 申请公布日期 2013.08.01
申请号 US201313800488 申请日期 2013.03.13
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PEI CHENGWEN;LI XI;WANG GENG
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项
地址