| 摘要 |
[Problem] To reduce the resistance of a conduction path when forming the conduction path by embedding a copper material in a recessed part for embedding, which has been formed in an interlayer insulating film formed by an SiCOH film. [Solution] When the recessed part is formed in an SiCOH film (1) by plasma, C moves out of the film and a damage layer is formed, but if this is removed by hydrochloric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas, or a gas containing trimethyl aluminum to this SiCOH film (1), B, Si, or Al is adsorbed on the SiCOH (1) film. These atoms bond with Ru; therefore, a Ru film (4) is easily formed on the SiCOH film. Next, the Ru film (4) is formed using, for example, Ru3(Co)12 gas and CO gas by CVD, copper (5) embedded thereafter, and an upper layer side wiring structure formed by carrying out CMP processing. |
