| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a highly-crystalline group III nitride crystal having an optionally-specified main plane other than {0001}.SOLUTION: A method for producing a group III nitride crystal, which is a method for producing a group III nitride crystal 20 having a main plane 20m orienting in an optionally-specified direction other than {0001} includes: a step in which a plurality of group III nitride crystal substrates 10p and 10q respectively having main planes 10pm and 10qm orienting in the specified direction are cut out of a group III nitride bulk crystal 1; a step in which the substrates 10p and 10q are closely arranged side by side so that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and the planes facing [0001] of the substrates 10p and 10q are oriented in the same direction; and a step in which a group III nitride crystal 20 is grown on the main planes 10pm and 10qm of the substrates 10p and 10q. |
