| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero junction field effect transistor which improves entrapment of a two-dimensional electron gas and improves mobility to enable operation at high voltage and high frequency; and provide a manufacturing method of the hetero junction field effect transistor.SOLUTION: A hetero junction field effect transistor composed of a nitride semiconductor comprises: a first nitride semiconductor layer 2 which is a buffer layer formed on a substrate 1; a second nitride semiconductor layer 3 which is a barrier layer formed on the first nitride semiconductor layer; and a third nitride semiconductor layer 4 which is a channel layer formed on the second nitride semiconductor layer. The second nitride semiconductor layer 3 is AlN, and the third nitride semiconductor layer 4 is composed of AlInGaN(0≤a<1, 0≤b≤1, 0≤a+b≤1). |
