| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of decreasing on-resistance of an IGBT by a configuration different from that in a technique of reducing a mesa width.SOLUTION: An IGBT comprises: a trench formed on a top face of a semiconductor substrate to extend in a bent shape; an insulation film covering an inner surface of the trench; a gate electrode arranged inside the trench; an emitter electrode formed on the top face of the semiconductor substrate; and a collector electrode formed on an undersurface of the semiconductor substrate. The semiconductor substrate includes inside: an emitter region which is composed of an n-type semiconductor and which contacts the insulation film to make ohmic connection with the emitter electrode; a body region which is composed of a p-type semiconductor, which contacts the insulation film under the emitter region, which contacts the insulation film at an inside corner of the trench to make ohmic connection with the emitter electrode; a drift region and a collector region. |
