发明名称 |
METHOD FOR PRODUCING CU-GA ALLOY POWDER, CU-GA ALLOY POWDER, METHOD FOR PRODUCING CU-GA ALLOY SPUTTERING TARGET, AND CU-GA ALLOY SPUTTERING TARGET |
摘要 |
Provided are a method for producing a Cu-Ga alloy powder, by which a high quality Cu-Ga alloy powder to be produced readily; a Cu-Ga alloy powder; a method for producing a Cu-Ga alloy sputtering target; and a Cu-Ga alloy sputtering target. Specifically, a Cu-Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu-Ga alloy sputtering target is produced by molding the Cu-Ga alloy powder followed by sintering.
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申请公布号 |
US2013192986(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201113639090 |
申请日期 |
2011.04.07 |
申请人 |
MORIMOTO TOSHIO;TAKAHASHI TATSUYA;ANDO ISAO;KOMUKAI TETSUFUMI;TAKAGI MASANORI;SATO ERIKO;MINAMI HIROTAKA;SUMITOMO METAL MINING CO., LTD. |
发明人 |
MORIMOTO TOSHIO;TAKAHASHI TATSUYA;ANDO ISAO;KOMUKAI TETSUFUMI;TAKAGI MASANORI;SATO ERIKO;MINAMI HIROTAKA |
分类号 |
C23C14/34;C22C9/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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