INTEGRATED CIRCUITS INCLUDING COPPER LOCAL INTERCONNECTS AND METHODS FOR THE MANUFACTURE THEREOF

摘要

Embodiments of a method for manufacturing an integrated circuit are provided. In one embodiment, a partially-fabricated integrated circuit is produced including a semiconductor substrate having source/drain regions, and a plurality of transistors including a plurality of gate conductors formed over the semiconductor substrate and between the source/drain regions. Device-level contacts are formed in ohmic contact with the gate conductors and with the source/drain regions. The device-level contacts terminate at substantially the same level above the semiconductor substrate. Copper interconnect lines are then formed in a level above the device-level contacts and in ohmic contact therewith to locally interconnect the plurality of transistors.