| 摘要 |
According to one embodiment, a semiconductor device includes a substrate, a plurality of interconnects, and a plurality of gap control units. The substrate includes silicon. The plurality of interconnects is provided above the substrate. The plurality of gap control units is provided respectively on the plurality of interconnects to have width dimensions greater than width dimension of the plurality of interconnects. A gap is provided between adjacent interconnects of the plurality of interconnects. An apical portion of the gap is provided between adjacent gap control units of the plurality of gap control units and between a lower surface position and an upper surface position of each of the adjacent gap control units.
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