发明名称 |
METHOD FOR MANUFACTURING DEEP-TRENCH SUPER PN JUNCTIONS |
摘要 |
The present invention provides a method for manufacturing a deep-trench super PN junction. The method includes: a deposition step for forming an epitaxial layer on a substrate; forming a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer; forming deep trenches in the epitaxial layer; completely filling the deep trenches with an epitaxial material and the epitaxial material is beyond the second dielectric layer; filling the entire surface of the second dielectric layer and the epitaxial layer such as Si using a third dielectric to from a surface filling layer with a predetermined height; etching back on the surface filling layer to the interface of the first dielectric layer and the epitaxial layer; and a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize Si epitaxial material.
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申请公布号 |
US2013196489(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213878453 |
申请日期 |
2012.05.31 |
申请人 |
WU TZONG SHIANN;WANG GENYI;YUAN LEIBING;WU PENGPENG;CSMC TECHNOLOGIES FAB2 CO., LTD.;CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
WU TZONG SHIANN;WANG GENYI;YUAN LEIBING;WU PENGPENG |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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