| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench-gate transistor, which can prevent increase in characteristic fluctuation due to a shape of a gate electrode buried in a gate electrode groove because a first impurity is implanted into a semiconductor substrate lateral to the gate electrode groove by diffusion of the first impurity when a first impurity diffusion region is formed in the semiconductor substrate which contacts a bottom face of the gate electrode groove.SOLUTION: A semiconductor device comprises: a gate electrode groove which is provided in a semiconductor substrate to extend in a first direction and which has a bottom face and first and second lateral faces opposite to each other; a first semiconductor film which includes a first impurity and which is formed at a bottom of the gate electrode groove; a first impurity diffusion region formed by diffusion of the first impurity into the semiconductor substrate in contact with the bottom of the first semiconductor film; a gate insulation film formed so as to cover the first and second lateral faces and a top face of the first semiconductor film; and a gate electrode formed in a lower part of a space surrounded by the gate insulation film. |
